savantic semiconductor product specification silicon pnp power transistors 2SA1133 2SA1133a d escription with to-220 package high breakdown voltage high power dissipation complement to type 2sc2660/2660a applications for power amplifier and tv vertical deflection output applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -200 v 2SA1133 -150 v ceo collector- emitter voltage 2SA1133a open base -180 v v ebo emitter-base voltage open collector -6 v i c collector current -2.0 a i cm collector current-peak -3.0 a p t total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1133 2SA1133a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA1133 -150 v (br)ceo collector-emitter breakdown voltage 2SA1133a i c =-5ma ,i b =0 -180 v v (br)cbo collector-base breakdown voltage i c =-0.5ma ,i e =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-0.5ma ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-500ma; i b =-50ma -1.0 v v be base-emitter on voltage i c =-400ma ; v ce =-10v -1.0 v i cbo collector cut-off current v cb =-200v; i e =0 -50 a i ebo emitter cut-off current v eb =-4v; i c =0 -50 a h fe-1 dc current gain i c =-150m a ; v ce =-10v 60 240 h fe-2 dc current gain i c =-400ma ; v ce =-10v 50 h fe-1 classifications q p 60-140 100-240
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1133 2SA1133a package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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